18338711. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18338711 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes:
- Substrate with an active pattern
- Conductive filling pattern on an impurity region at the upper portion of the active pattern
- First spacer and second spacer stacked on the sidewall of the conductive filling pattern in a horizontal direction
- Bit line structure on the conductive filling pattern
- Impurity region containing impurities
- First spacer made of insulating material containing the impurities
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- Potential Applications
This technology can be applied in:
- Semiconductor manufacturing
- Memory devices
- Integrated circuits
- Problems Solved
This technology helps in:
- Improving performance of semiconductor devices
- Enhancing memory storage capacity
- Reducing power consumption
- Benefits
The benefits of this technology include:
- Higher efficiency in semiconductor devices
- Increased memory density
- Lower energy consumption in electronic devices
Original Abstract Submitted
A semiconductor device may include a substrate including an active pattern, a conductive filling pattern on an impurity region at an upper portion of the active pattern, a first spacer and a second spacer stacked on a sidewall of the conductive filling pattern in a horizontal direction, and a bit line structure on the conductive filling pattern. The impurity region may include impurities. The horizontal direction may be parallel to an upper surface of the substrate. The first spacer may include an insulating material containing the impurities.
