18336497. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Seokcheon Baek of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18336497 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with a memory cell region and a connection region. It also includes gate electrodes in the memory cell region, a pair of gate stack separation insulation layers, and a pad structure in the connection region.
- The semiconductor device includes gate electrodes arranged in a vertical direction, including a ground selection line and multiple word lines.
- The gate stack separation insulation layers pass through the gate electrodes and extend in a horizontal direction.
- The pad structure in the connection region includes multiple pad layers connected to the gate electrodes.
- The pad layers are arranged in a staircase shape in both horizontal directions.
- The ground selection line includes multiple cut regions that are apart from the edges of the pad layers.
Potential applications of this technology:
- Memory devices: The semiconductor device can be used in memory devices such as flash memory or DRAM.
- Integrated circuits: It can be utilized in various integrated circuits that require memory cell regions and connection regions.
Problems solved by this technology:
- Efficient layout: The staircase arrangement of the pad layers allows for a compact and efficient layout of the semiconductor device.
- Gate stack separation: The gate stack separation insulation layers ensure proper isolation between the gate electrodes.
Benefits of this technology:
- Space-saving: The compact layout of the pad layers saves space on the semiconductor device.
- Improved performance: The proper isolation between gate electrodes enhances the performance and reliability of the device.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and arranged apart from one another in a vertical direction, the gate electrodes including a ground selection line and a plurality of word lines, a pair of gate stack separation insulation layers passing through the gate electrodes and extending in a first horizontal direction in the memory cell region and the connection region, and a pad structure including a plurality of pad layers in the connection region, connected to respective ones of the gate electrodes, arranged in a staircase shape in the first horizontal direction and in a second horizontal direction, the ground selection line including a plurality of ground selection line cut regions each being apart from edges of the pad layers in the second horizontal direction.
