18336340. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18336340 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes:
- A bit line on a substrate
- A gate electrode over the bit line and spaced apart from it
- A gate insulation pattern on a sidewall of the gate electrode
- A channel on a sidewall of the gate insulation pattern, made of an oxide semiconductor material
- A conductive pattern contacting the upper surface of the channel, made of an amorphous oxide semiconductor material
- A contact plug contacting the upper surface of the conductive pattern, which may include a metal
Potential applications of this technology:
- Advanced semiconductor devices
- High-performance electronics
- Integrated circuits
Problems solved by this technology:
- Improving performance and efficiency of semiconductor devices
- Enhancing conductivity and reliability of electronic components
Benefits of this technology:
- Increased speed and efficiency of electronic devices
- Improved reliability and durability of semiconductor components
- Enhanced performance of integrated circuits
Original Abstract Submitted
A semiconductor device may include a bit line on a substrate, a gate electrode over the bit line and spaced apart from the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel on a sidewall of the gate insulation pattern and including an oxide semiconductor material, a conductive pattern contacting an upper surface of the channel and including an amorphous oxide semiconductor material, and a contact plug contacting an upper surface of the conductive pattern. The contact plug may include a metal. The amorphous oxide semiconductor material may include fluorine (F), chlorine (Cl), nitrogen (N), hydrogen (H), or argon (Ar).
