18333572. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE simplified abstract (Kioxia Corporation)

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SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Mana Tanabe of Setagaya Tokyo (JP)

Kaori Umezawa of Fujisawa Kanagawa (JP)

Kosuke Takai of Yokohama Kanagawa (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18333572 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Simplified Explanation

The patent application describes a method for substrate processing involving the formation of a liquid film on a substrate with different films on different regions, solidifying the liquid film, and selectively melting the solidified film on specific regions.

  • The method involves forming a liquid film on a substrate with distinct films on different regions.
  • The liquid film is then solidified to create a solidified film on the substrate.
  • The solidified film on one region is caused to melt before the solidified film on another region.

Potential Applications

This technology could be applied in the semiconductor industry for advanced substrate processing techniques, such as selective film removal or modification.

Problems Solved

This method allows for precise control over the melting of different films on a substrate, enabling selective processing and customization of materials on a microscopic scale.

Benefits

The ability to selectively melt solidified films on specific regions of a substrate can lead to improved efficiency and accuracy in substrate processing, resulting in enhanced product quality and performance.

Potential Commercial Applications

One potential commercial application of this technology could be in the production of microelectronics, where precise material deposition and removal processes are crucial for device functionality.

Possible Prior Art

Prior art in the field of substrate processing may include methods for selective film deposition or removal on substrates, but the specific technique of selectively melting solidified films on different regions of a substrate may be novel.

Unanswered Questions

How does this method compare to traditional substrate processing techniques?

This article does not provide a direct comparison between this method and traditional substrate processing techniques in terms of efficiency, cost-effectiveness, or scalability.

What are the limitations of this technology in terms of substrate size and material compatibility?

The article does not address any potential limitations of this technology, such as its applicability to different substrate sizes or compatibility with various materials.


Original Abstract Submitted

According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.