18330672. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18330672 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, conductive structures, and interlayer dielectric layers. The interlayer dielectric layer consists of a lower interlayer dielectric layer and an upper interlayer dielectric layer with different mechanical strengths.
- The semiconductor device has conductive structures on the substrate that extend in parallel to each other in a first direction.
- The first interlayer dielectric layer is located in first and second trenches between the conductive structures.
- The width of the first trench in a second direction may be less than the width of the second trench in the second direction.
- The first interlayer dielectric layer is composed of a lower interlayer dielectric layer and an upper interlayer dielectric layer stacked sequentially.
- The mechanical strength of the upper interlayer dielectric layer is greater than the mechanical strength of the lower interlayer dielectric layer.
Potential Applications
This technology could be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and reliability.
Problems Solved
This technology helps in enhancing the mechanical strength and overall durability of the semiconductor device, reducing the risk of damage or failure during operation.
Benefits
The use of different mechanical strengths in the interlayer dielectric layers improves the structural integrity of the semiconductor device, leading to increased longevity and stability.
Potential Commercial Applications
"Enhancing Semiconductor Device Durability with Variable Mechanical Strength Interlayer Dielectric Layers"
Possible Prior Art
There may be prior art related to the use of different mechanical strengths in interlayer dielectric layers in semiconductor devices to improve structural integrity and reliability.
Unanswered Questions
How does this technology impact the overall cost of manufacturing semiconductor devices?
The abstract does not provide information on the cost implications of implementing this technology in semiconductor device production.
What specific types of electronic devices could benefit the most from this innovation?
The abstract does not specify the potential electronic devices that could benefit the most from the use of variable mechanical strength interlayer dielectric layers.
Original Abstract Submitted
Disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer in first and second trenches between the conductive structures. A width in a second direction of the first trench may be less than a width in the second direction of the second trench. The first interlayer dielectric layer may include a lower interlayer dielectric layer and an upper interlayer dielectric layer on the lower interlayer dielectric layer, sequentially stacked. A mechanical strength of the upper interlayer dielectric layer may be greater than a mechanical strength of the lower interlayer dielectric layer.
