18329067. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyun Geun Choi of Suwon-si (KR)
Seok Han Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18329067 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes various components such as a gate electrode, a bit line, a cell semiconductor pattern, a capacitor structure, a bit line strapping line, a bit line selection line, and a selection semiconductor pattern. These components work together to store and retrieve data efficiently.
- Gate electrode, bit line, cell semiconductor pattern, capacitor structure, bit line strapping line, bit line selection line, and selection semiconductor pattern are key components of the semiconductor memory device.
- The capacitor structure includes a first electrode, a second electrode, and a capacitor dielectric film.
- The bit line strapping line is spaced apart from the bit line and electrically connected to it.
- The selection semiconductor pattern is electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.
Potential Applications
The technology described in this patent application could be applied in various memory storage devices such as solid-state drives, smartphones, tablets, and other electronic devices requiring fast and efficient data storage.
Problems Solved
This technology solves the problem of efficient data storage and retrieval in semiconductor memory devices. By optimizing the components and their connections, data can be stored and accessed quickly and reliably.
Benefits
The benefits of this technology include faster data storage and retrieval, improved memory efficiency, and increased reliability in semiconductor memory devices. This can lead to better performance in electronic devices and overall improved user experience.
Potential Commercial Applications
The potential commercial applications of this technology include the manufacturing of high-speed and high-capacity memory storage devices for consumer electronics, data centers, and other industries requiring efficient data storage solutions.
Possible Prior Art
One possible prior art related to this technology could be the development of semiconductor memory devices with similar components and structures for data storage and retrieval. Research and patents in the field of memory storage technologies may also be relevant as prior art.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory storage solutions in terms of speed and efficiency. Further research and testing may be needed to determine the performance advantages of this technology.
What are the potential limitations or challenges in implementing this technology on a large scale?
The article does not address potential limitations or challenges in implementing this technology on a large scale. Factors such as manufacturing costs, scalability, and compatibility with existing systems could be important considerations in the commercialization of this technology.
Original Abstract Submitted
Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.
