18327846. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Shuangqiang Luo of Boise ID (US)
Rajasekhar Venigalla of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18327846 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
The patent application describes a microelectronic device that consists of a stack structure with blocks separated by dielectric slot structures. Each block contains a vertically alternating sequence of conductive and insulative structures arranged in tiers. The blocks also have a stadium structure with opposing staircase structures, where the steps are made up of the edges of the tiers. Additionally, the blocks include a filled trench that is located vertically above and within the horizontal boundaries of the stadium structure. The filled trench consists of dielectric liner structures and additional dielectric liner structures with a different material composition, alternating with each other. The filled trench also contains dielectric fill material that covers an alternating sequence of the dielectric liner structures and additional dielectric liner structures.
- Microelectronic device with a stack structure and blocks separated by dielectric slot structures
- Blocks have a stadium structure with opposing staircase structures made of edges of tiers
- Filled trench located vertically above and within the horizontal boundaries of the stadium structure
- Filled trench includes alternating dielectric liner structures and additional dielectric liner structures with different material composition
- Dielectric fill material covers alternating sequence of dielectric liner structures and additional dielectric liner structures
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Semiconductor devices
Problems Solved
- Improved performance and functionality of microelectronic devices
- Enhanced electrical conductivity and insulation properties
- Efficient use of space within the device
Benefits
- Higher efficiency and speed in microelectronic devices
- Increased storage capacity
- Improved reliability and durability of the device
Original Abstract Submitted
A microelectronic device includes a stack structure including blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. The blocks including a stadium structure including opposing staircase structures each having steps comprising edges of the tiers. The blocks further include a filled trench vertically overlying and within horizontal boundaries of the stadium structure. The filled trench includes dielectric liner structures and additional dielectric liner structures having a different material composition than that of the dielectric liner structures and alternating with the dielectric liner structures. The filled trench also includes dielectric fill material overlying an alternating sequence of the dielectric liner structures and additional dielectric liner structures.
