18326988. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18326988 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract of the patent application describes a semiconductor device that includes various layers and structures to enable data storage. The device has an active region defined by a device isolation layer and a pad layer. It also includes a first region of the active region, a first separation layer penetrating through the pad layer in one direction, and a second separation layer penetrating through the pad layer in another direction. A word line is located below the second separation layer, while a bit line extends in the first direction and is connected to a second region of the active region. A contact structure on the side surface of the bit line is connected to the pad layer, and a data storage structure is on the contact structure and connected to it. The first separation layer includes an airgap or a material with a lower dielectric constant than silicon nitride.
- The semiconductor device includes an active region, isolation layer, pad layer, separation layers, word line, bit line, contact structure, and data storage structure.
- The first separation layer penetrates through the pad layer in one direction, while the second separation layer penetrates through the pad layer in another direction.
- The word line is located below the second separation layer, and the bit line extends in the first direction and is connected to a second region of the active region.
- The contact structure is on the side surface of the bit line and connected to the pad layer, and the data storage structure is on the contact structure and connected to it.
- The first separation layer includes an airgap or a material with a lower dielectric constant than silicon nitride.
Potential applications of this technology:
- Memory devices: The semiconductor device described in the patent application can be used in memory devices for data storage.
- Integrated circuits: The technology can be applied in various integrated circuits that require data storage capabilities.
Problems solved by this technology:
- Data storage density: The semiconductor device allows for increased data storage density due to the use of multiple layers and structures.
- Signal interference: The separation layers help in reducing signal interference between different components of the device.
Benefits of this technology:
- Increased storage capacity: The use of multiple layers and structures enables higher storage capacity in the semiconductor device.
- Improved performance: The reduction in signal interference leads to improved performance and reliability of the device.
Original Abstract Submitted
A semiconductor device includes an active region defined by a device isolation layer, a pad layer on the device isolation layer and a first region of the active region, a first separation layer penetrating through the pad layer and extending in a first direction, a second separation layer penetrating through the pad layer and extending in a second direction, a word line below the second separation layer, extending in the second direction, and embedded in a substrate, a bit line extending in the first direction and connected to a second region of the active region, a contact structure on a side surface of the bit line and connected to the pad layer, and an data storage structure on the contact structure and connected to the contact structure. The first separation layer includes an airgap or a material having a dielectric constant less than a dielectric constant of silicon nitride.
