18326145. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18326145 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with a unique capacitor structure that enhances electrical energy barriers within the device.
- The device includes a transistor and a capacitor structure connected to the transistor.
- The capacitor structure consists of a first electrode, a dielectric layer, and a second electrode.
- The first electrode is made of a conductive material with a specific work function.
- The dielectric layer contains a first metal.
- The second electrode is made of a conductive material with a lower work function than the first electrode.
- An interfacial layer between the dielectric layer and the second electrode increases the electrical energy barrier compared to a direct interface.
Potential Applications
- This technology can be used in various integrated circuit devices to improve performance and efficiency.
- It can be applied in memory devices, processors, and other electronic components.
Problems Solved
- Enhances the electrical energy barriers within the device, leading to better overall performance.
- Improves the reliability and stability of the integrated circuit device.
Benefits
- Increased efficiency and performance of integrated circuit devices.
- Enhanced reliability and stability of electronic components.
- Potential for advancements in semiconductor technology.
Original Abstract Submitted
An integrated circuit device includes a transistor on a substrate and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes a first electrode including a first conductive material having a first work function, a dielectric layer on the first electrode, the dielectric layer including first metal, a second electrode on the first electrode with the dielectric layer therebetween and including a second conductive material having a second work function that is less than the first work function, and an interfacial layer between the dielectric layer and the second electrode, where an electrical energy barrier between the second electrode and the dielectric layer is increased by the interfacial layer relative to that of a direct interface therebetween.
