18323440. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323440 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a peripheral structure and a cell structure. The cell structure includes a substrate with gate electrodes stacked on one surface, an insulating layer on the opposite surface, penetration contact plugs, gapfill conductive patterns, and spacers.
- The semiconductor memory device has a peripheral structure and a cell structure.
- The cell structure includes a substrate with gate electrodes stacked on one surface.
- An insulating layer is present on the opposite surface of the substrate.
- Penetration contact plugs penetrate the substrate.
- Gapfill conductive patterns are provided to penetrate the substrate and insulating layer.
- Spacers are present between the gapfill conductive patterns and the substrate.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor memory devices for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This technology addresses the need for higher density and more efficient semiconductor memory devices by utilizing a three-dimensional structure with innovative gapfill conductive patterns and spacers.
Benefits
The benefits of this technology include increased memory storage capacity, improved performance, and potentially lower power consumption in electronic devices utilizing these semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of next-generation memory chips for consumer electronics, data centers, and other high-tech industries.
Possible Prior Art
One possible prior art for this technology could be the development of three-dimensional memory structures in the semiconductor industry, which has been an ongoing area of research and innovation.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. The cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.
