18322570. SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyunsu Hwang of SUWON-SI (KR)

Unbyoung Kang of SUWON-SI (KR)

Jumyong Park of SUWON-SI (KR)

Solji Song of SUWON-SI (KR)

Dongjoon Oh of SUWON-SI (KR)

Hyunchul Jung of SUWON-SI (KR)

SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18322570 titled 'SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with a unique structure for improved electrical connections.

  • The device includes a semiconductor substrate and a pad insulating layer on top of it.
  • A through electrode structure partially penetrates the substrate but does not go through the pad insulating layer.
  • An insulating liner surrounds the through electrode structure.
  • An insulating sidewall goes through the pad insulating layer, part of the substrate, and part of the insulating liner, creating a pad hole.
  • A bonding pad structure is placed on the pad insulating layer and fills the pad hole, making contact with the through electrode structure.

Potential applications of this technology:

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Sensors
  • Power devices

Problems solved by this technology:

  • Improved electrical connections between the bonding pad structure and the through electrode structure
  • Enhanced reliability and performance of semiconductor devices

Benefits of this technology:

  • Better electrical conductivity
  • Reduced signal loss
  • Increased device reliability
  • Improved overall performance


Original Abstract Submitted

A includes a semiconductor substrate, a pad insulating layer disposed on the semiconductor substrate, a through electrode structure that partially penetrates the semiconductor substrate but does not penetrate the pad insulating layer, an insulating liner that at least partially surrounds the through electrode structure, an insulating sidewall that penetrates the pad insulating layer, a part of the semiconductor substrate and at least a part of the insulating liner, and includes a pad hole formed therein, and a bonding pad structure disposed on the pad insulating layer and that fills the pad hole, and contacts the through electrode structure