18321817. INTEGRATED CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT
Organization Name
Inventor(s)
Taiko Yamaguchi of Suwon-si (KR)
INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18321817 titled 'INTEGRATED CIRCUIT
Simplified Explanation
The integrated circuit described in the patent application includes an inductive element with a unique structure for improved performance.
- The inductive element consists of a first through electrode that extends in one direction perpendicular to the substrate.
- An upper metallization pattern is connected to the first through electrode and extends in a different direction perpendicular to the first direction.
- A lower metallization pattern, also connected to the first through electrode, extends in the same direction as the upper metallization pattern but is spaced apart from it.
Potential Applications
This technology could be used in various electronic devices such as smartphones, computers, and IoT devices where inductive elements are required for signal processing or power transfer.
Problems Solved
The design of the inductive element helps reduce interference and crosstalk between different components on the integrated circuit, leading to improved overall performance and reliability.
Benefits
- Enhanced signal processing capabilities
- Improved power efficiency
- Reduced interference and crosstalk
- Higher reliability and performance of electronic devices
Original Abstract Submitted
An integrated circuit including an inductive element according to some embodiments is provided. The inductive element includes a first through electrode extending in a first direction that is perpendicular to a substrate (e.g., an upper surface of the substrate), an upper metallization pattern connected to the first through electrode and extending in a second direction that is perpendicular to the first direction, and a lower metallization pattern connected to the first through electrode and extending in the second direction, wherein the upper metallization pattern and the lower metallization pattern are spaced apart from each other with the first through electrode therebetween.
