18321290. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Changhyun Kim of Suwon-si (KR)
Kyung-Eun Byun of Suwon-si (KR)
Keunwook Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18321290 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that consists of a channel layer made of a two-dimensional semiconductor material. It also includes a gate insulating layer located in the center of the channel layer, a gate electrode on top of the gate insulating layer, and two conductive layers on opposite sides of the channel layer. Both conductive layers are made of metal boride.
- The semiconductor device includes a channel layer made of a two-dimensional semiconductor material.
- A gate insulating layer is positioned in the center of the channel layer.
- A gate electrode is placed on top of the gate insulating layer.
- Two conductive layers, made of metal boride, are in contact with opposite sides of the channel layer.
Potential Applications:
- This semiconductor device could be used in electronic devices such as transistors, integrated circuits, and sensors.
- It may find applications in the field of optoelectronics, where it can be used in light-emitting diodes (LEDs) or photodetectors.
Problems Solved:
- The device solves the problem of controlling the flow of current in a semiconductor by utilizing a two-dimensional channel layer and gate electrode.
- It addresses the need for efficient and reliable semiconductor devices by incorporating metal boride conductive layers.
Benefits:
- The use of a two-dimensional semiconductor material in the channel layer allows for better control of current flow and improved device performance.
- The gate insulating layer and gate electrode enable precise modulation of the channel conductivity.
- The metal boride conductive layers provide enhanced conductivity and stability to the device.
- The semiconductor device offers potential cost savings and increased efficiency compared to traditional semiconductor devices.
Original Abstract Submitted
A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.
