18320816. SEMICONDUCTOR MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Yukio Hayakawa of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320816 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The disclosed patent application describes semiconductor memory devices and electronic systems that include these devices. Here is a simplified explanation of the abstract:
- The semiconductor memory device has a vertical channel that is perpendicular to the top surface of a substrate.
- Word lines are positioned on one side of the vertical channel and are vertically stacked on the substrate.
- Back-gate electrodes are positioned on the other side of the vertical channel and are also vertically stacked on the substrate.
- A ferroelectric layer is placed between the word lines and the first side of the vertical channel.
- A first intermediate insulating layer is positioned between the ferroelectric layer and the first side of the vertical channel.
- A second intermediate insulating layer is placed between the back-gate electrodes and the second side of the vertical channel.
Potential applications of this technology:
- Memory devices in electronic systems such as computers, smartphones, and tablets.
- Non-volatile memory applications where data can be retained even when power is turned off.
- High-density memory applications where a large amount of data can be stored in a small space.
Problems solved by this technology:
- Improved memory performance and reliability.
- Enhanced data retention capabilities.
- Reduction in power consumption.
- Increased memory density.
Benefits of this technology:
- Faster access times and data transfer rates.
- Lower power consumption, leading to improved energy efficiency.
- Higher memory density, allowing for more data storage in a smaller footprint.
- Enhanced reliability and data retention capabilities.
Original Abstract Submitted
Disclosed are semiconductor memory devices and electronic systems including the same. The semiconductor memory device may include a vertical channel perpendicular to a top surface of a substrate, word lines disposed on a first side of the vertical channel and vertically stacked on the substrate, back-gate electrodes disposed on a second side of the vertical channel and vertically stacked on the substrate, a ferroelectric layer disposed between the word lines and the first side of the vertical channel, a first intermediate insulating layer disposed between the ferroelectric layer and the first side of the vertical channel, and a second intermediate insulating layer disposed between the back-gate electrodes and the second side of the vertical channel.
