18320046. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minki Kim of Suwon-si (KR)

Seungduk Baek of Suwon-si (KR)

Hyuekjae Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18320046 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract of this patent application describes a semiconductor device that includes a base structure with bonding pads and test pads, and a semiconductor chip with bonding pads and test pads. The width of the bonding pad on the chip is smaller than the width of the test pad on the chip. An air gap is provided between the test pads of the base structure and the chip.

  • The semiconductor device has a base structure with bonding pads and test pads.
  • The semiconductor chip has bonding pads and test pads.
  • The bonding pad on the chip is narrower than the test pad on the chip.
  • An air gap is present between the test pads of the base structure and the chip.

Potential applications of this technology:

  • Semiconductor manufacturing industry
  • Integrated circuit testing and development

Problems solved by this technology:

  • Improved electrical contact between the base structure and the semiconductor chip
  • Reduction of signal interference or cross-talk between the bonding pads and test pads

Benefits of this technology:

  • Enhanced performance and reliability of the semiconductor device
  • Improved testing accuracy and efficiency
  • Reduction of potential damage or failure due to signal interference


Original Abstract Submitted

A semiconductor device includes a base structure comprising a first bonding pad and a first test pad, and a semiconductor chip comprising a second bonding pad being in contact with the first bonding pad of the base structure and a second test pad being in contact with the first test pad of the base structure. A width of the second bonding pad of the semiconductor chip is less than a width of the second test pad of the semiconductor chip. An air gap is provided between the first test pad of the base structure and the second test pad of the semiconductor chip.