18320013. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITHOUT THICKNESS DEVIATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITHOUT THICKNESS DEVIATION
Organization Name
Inventor(s)
Jun Yun Kweon of Suwon-Si (KR)
Yeong Beom Ko of Suwon-Si (KR)
Jung Seok Ryu of Suwon-Si (KR)
Hwa Young Lee of Suwon-Si (KR)
Hyun Su Hwang of Suwon-Si (KR)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITHOUT THICKNESS DEVIATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320013 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITHOUT THICKNESS DEVIATION
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device using the following steps:
- Preparing a semiconductor wafer with a first semiconductor substrate and a first through silicon via.
- Removing a trim region of the first semiconductor substrate along an edge portion to form a remaining edge region.
- Attaching the semiconductor wafer to a carrier substrate with the remaining edge region in contact with the carrier substrate.
- Forming an edge protection layer along the remaining edge region.
- Exposing the first through silicon via by removing a predetermined depth of the first semiconductor substrate.
- Forming a second final passivation layer to expose the upper surface of the first through silicon via.
- Forming a plurality of first upper connection pads on the second final passivation layer.
- Dicing the semiconductor wafer into a plurality of first semiconductor chips.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design
Problems solved by this technology:
- Improved protection of semiconductor devices during manufacturing process
- Enhanced reliability of semiconductor chips
- Facilitates efficient dicing process
Benefits of this technology:
- Increased yield of high-quality semiconductor chips
- Enhanced durability and longevity of semiconductor devices
- Streamlined manufacturing process for semiconductor wafers
Original Abstract Submitted
A method for manufacturing semiconductor device includes preparing a semiconductor wafer including a first semiconductor substrate and a first through silicon via; removing a trim region of the first semiconductor substrate along an edge portion of the semiconductor wafer to form a remaining edge region; attaching the semiconductor wafer to a carrier substrate, wherein the remaining edge region is in contact with the carrier substrate; forming an edge protection layer along the remaining edge region; exposing the first through silicon via by removing a predetermined depth of the first semiconductor substrate; forming a second final passivation layer to expose the upper surface of the first through silicon via; forming a plurality of first upper connection pads on the second final passivation layer; and dicing the semiconductor wafer into a plurality of first semiconductor chips.
