18319612. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

IMAGE SENSOR

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Juyeong Kim of Suwon-si (KR)

Changhyun Park of Suwon-si (KR)

Eunsub Shim of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18319612 titled 'IMAGE SENSOR

Simplified Explanation

The patent application describes an image sensor with advanced pixel structure and control mechanisms for improved image quality.

  • Pixel array with photodiode, transfer transistor, floating diffusion nodes, capacitors, and various transistors.
  • Second switch transistor turns off in first period and on in second period of exposure for photodiode.
  • Reset transistor turns on in first period and off in second period of exposure for photodiode.

Potential Applications

  • Digital cameras
  • Smartphones
  • Surveillance systems
  • Medical imaging devices

Problems Solved

  • Improved image quality
  • Enhanced low-light performance
  • Reduced noise in captured images

Benefits

  • Higher quality images
  • Better performance in low-light conditions
  • Enhanced overall image sensor functionality


Original Abstract Submitted

An image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the pixels includes a photodiode, a transfer transistor, first to third floating diffusion nodes, a first capacitor, a second capacitor, a third capacitor, a first switch transistor, a second switch transistor, and a reset transistor. The second switch transistor is configured to turn off in a first period and to turn on in a second period of an exposure period of the photodiode, and the reset transistor is configured to turn on in the first period and to turn off in the second period of the exposure period of the photodiode.