18317328. EXTREME ULTRAVIOLET (EUV) PHOTOMASK simplified abstract (Samsung Electronics Co., Ltd.)
Contents
EXTREME ULTRAVIOLET (EUV) PHOTOMASK
Organization Name
Inventor(s)
Jeonghyun Kim of Suwon-si (KR)
EXTREME ULTRAVIOLET (EUV) PHOTOMASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18317328 titled 'EXTREME ULTRAVIOLET (EUV) PHOTOMASK
Simplified Explanation
The abstract describes an extreme ultraviolet (EUV) photomask that consists of different regions, including a main region, a scribe lane region, buffer regions, and a black border region. The buffer regions are located outside the scribe lane region and have the same width. The black border region surrounds the buffer regions and includes corner regions.
- The EUV photomask includes a main region, scribe lane region, buffer regions, and a black border region.
- The buffer regions are located outside the scribe lane region and have the same width.
- The black border region surrounds the buffer regions and includes corner regions.
- The corner regions of the black border region contact the buffer regions and the scribe lane region.
Potential applications of this technology:
- Semiconductor manufacturing: The EUV photomask can be used in the production of semiconductor devices, where extreme ultraviolet lithography is employed.
- Nanotechnology: The precise patterning provided by the photomask can be utilized in the fabrication of nanoscale structures and devices.
Problems solved by this technology:
- Mask alignment: The distinct regions of the photomask help in aligning it accurately during the lithography process, ensuring proper patterning of the semiconductor devices.
- Edge enhancement: The black border region enhances the contrast and definition of the patterns, reducing the risk of edge roughness or blurring.
Benefits of this technology:
- Improved precision: The different regions of the photomask allow for precise alignment and patterning, resulting in higher accuracy and yield in semiconductor manufacturing.
- Enhanced image quality: The black border region helps in improving the clarity and sharpness of the patterns, leading to better image quality and device performance.
Original Abstract Submitted
An extreme ultraviolet (EUV) photomask may include a mask structure including a main region, a scribe lane region surrounding the main region, buffer regions outside the scribe lane region and apart from each other and each having a same first width, and a black border region outside the buffer regions. The buffer regions may include a first buffer region, a second buffer region, and a third buffer region. The black border region may include a first corner region, a second corner region, and a third corner region. The first corner region may contact the first buffer region and the second buffer region. The second corner region may contact the first buffer region, the third buffer region, and a side of the scribe lane region. The third corner region may contact the second buffer region and the third buffer region.
