18317274. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18317274 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a unique cell array structure that includes a stack, source structure, and vertical structure. The vertical structure consists of a channel layer with first portions in vertical channel holes and a second portion electrically connected to the first portions.
- The semiconductor memory device includes a cell array structure with a stack consisting of interlayer insulating layers and conductive patterns stacked alternately.
- The vertical structure in the cell array includes a channel layer with first portions in vertical channel holes and a second portion connected to the first portions.
- The source structure is located on the stack, and the vertical structure extends in the stack and is electrically connected to the bottom surface of the source structure.
Potential Applications
This technology could be applied in:
- High-capacity data storage devices
- Advanced computing systems
Problems Solved
This technology addresses:
- Increasing demand for higher memory capacity
- Enhancing data processing speed and efficiency
Benefits
The benefits of this technology include:
- Improved memory storage density
- Enhanced data processing capabilities
- Increased overall performance of semiconductor memory devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data centers
Possible Prior Art
One possible prior art could be the development of three-dimensional memory structures in semiconductor devices.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices to evaluate speed and efficiency.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges that may arise in scaling up the production and implementation of this technology.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a substrate, a peripheral circuit structure on the substrate, and a cell array structure on the peripheral circuit structure. The cell array structure may include a stack that includes interlayer insulating layers and conductive patterns alternately stacked with one another, a source structure on the stack, and a vertical structure that extends in the stack and is electrically connected to a bottom surface of the source structure. The vertical structure may include a channel layer that includes first portions respectively in vertical channel holes extending in the stack, and a second portion that extends in a region between the stack and the source structure and is electrically connected to the first portions.
