18315982. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Jung Wook Lim of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18315982 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the patent application consists of sub-pixels with photoelectric conversion regions, floating diffusion regions, and transfer transistors to transfer charges between these regions. The sub-pixels are arranged in a grid pattern, with each sub-pixel containing a photoelectric conversion region, a floating diffusion region, and a transfer transistor.
- The image sensor includes a first sub-pixel with a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges from the photoelectric conversion region to the floating diffusion region.
- Adjacent to the first sub-pixel is a second sub-pixel with a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges from the second photoelectric conversion region to the second floating diffusion region.
- The first photoelectric conversion region may be divided into two sub-regions by a potential level isolation region that blocks charge movement, with separate sub-transfer transistors for each sub-region to transfer charges to the floating diffusion region.
Potential Applications
The technology described in the patent application could be used in digital cameras, smartphones, and other devices with image sensors to improve image quality and performance.
Problems Solved
This technology helps to reduce noise and improve the efficiency of charge transfer within the image sensor, leading to clearer and more accurate image capture.
Benefits
The benefits of this technology include higher image quality, improved low-light performance, and overall better image sensor functionality.
Potential Commercial Applications
The technology could be applied in the development of next-generation digital cameras, smartphones, security cameras, and other imaging devices to enhance their performance and image quality.
Possible Prior Art
One possible prior art for this technology could be the use of similar sub-pixel structures in image sensors to improve charge transfer efficiency and image quality.
Unanswered Questions
How does this technology compare to existing image sensor designs on the market?
This article does not provide a direct comparison between this technology and existing image sensor designs, leaving the reader to wonder about the specific advantages and disadvantages of this innovation in relation to current market offerings.
What are the potential limitations or challenges in implementing this technology in commercial products?
The article does not address any potential limitations or challenges that may arise in the practical application of this technology in commercial products, leaving room for speculation on the feasibility and scalability of this innovation.
Original Abstract Submitted
An image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. The first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.
