18315571. SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES
Organization Name
Inventor(s)
WONYOUNG Choi of SUWON-SI (KR)
SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18315571 titled 'SEMICONDUCTOR MEMORY DEVICE AND MEMORY MODULE HAVING VARIOUS OPERATION MODES
Simplified Explanation
The semiconductor memory device described in the abstract includes a receiving circuit, a multiplexing circuit, a decoding circuit, and a memory cell array. The receiving circuit processes input command/address signals and a clock signal to generate multiple signal groups. The multiplexing circuit can operate in different modes to output selected signal groups, while the decoding circuit generates output signals based on these selected signal groups.
- Receiving circuit processes input command/address signals and clock signal to generate signal groups
- Multiplexing circuit can operate in different modes to output selected signal groups
- Decoding circuit generates output signals based on selected signal groups
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as RAM, ROM, or flash memory, to improve data processing efficiency and speed.
Problems Solved
This technology solves the problem of efficiently processing multiple input command/address signals in a semiconductor memory device, leading to improved performance and reliability.
Benefits
The benefits of this technology include enhanced data processing speed, increased memory device efficiency, and improved overall performance in semiconductor memory applications.
Potential Commercial Applications
The technology could find applications in various industries that rely on semiconductor memory devices, such as consumer electronics, automotive systems, medical devices, and industrial automation.
Possible Prior Art
One possible prior art for this technology could be the use of multiplexing circuits in semiconductor memory devices to optimize signal processing and data transfer.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory devices in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this innovation.
What are the potential limitations or drawbacks of implementing this technology in semiconductor memory devices?
The article does not address any potential limitations or drawbacks of implementing this technology in semiconductor memory devices. Additional studies or analyses may be required to identify any challenges associated with the practical application of this innovation.
Original Abstract Submitted
A semiconductor memory device includes a receiving circuit, a multiplexing circuit, a decoding circuit and a memory cell array. The receiving circuit receives a plurality of input command/address (CA) signals, and generates a plurality of CA signal groups based on the input CA signals and a clock signal. The multiplexing circuit operates in one of a first operation mode and a second operation mode based on a mode selection signal, outputs the plurality of CA signal groups as a plurality of selected CA signal groups in the first operation mode, and generates the plurality of selected CA signal groups by multiplexing the plurality of sub-CA signals included in the plurality of CA signal groups in the second operation mode. The decoding circuit generates a plurality of output CA signals based on the plurality of selected CA signal groups.
