18315214. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Younglim Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18315214 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application consists of a lower structure, a plurality of lower electrodes on the lower structure, an upper electrode on the lower electrodes, a dielectric layer with a ferroelectric or antiferroelectric layer between the lower electrodes and the upper electrode, and a plurality of interfacial layers between the lower electrodes and the dielectric layer. The interfacial layers include a first layer with a first metal element, a second metal element different from the first metal element, and elemental nitrogen, and a second layer between the first layer and the dielectric layer with the first metal element, the second metal element, and elemental oxygen. The concentration of the second metal element in the first layer is lower than in the second layer.
- The semiconductor device includes a unique combination of lower and upper electrodes, a dielectric layer with a ferroelectric or antiferroelectric layer, and interfacial layers with specific metal elements and elemental nitrogen and oxygen.
- The first layer of interfacial layers contacts the lower electrodes and contains a first metal element, a second metal element, and elemental nitrogen.
- The second layer of interfacial layers is between the first layer and the dielectric layer and contains the first metal element, the second metal element, and elemental oxygen.
- The concentration of the second metal element in the first layer is lower than in the second layer.
Potential applications of this technology:
- Memory devices: The ferroelectric or antiferroelectric layer in the dielectric layer can be utilized for non-volatile memory applications.
- Sensor devices: The unique combination of electrodes and interfacial layers can be used in sensors for various applications, such as pressure sensors or temperature sensors.
- Energy storage devices: The semiconductor device may find applications in energy storage devices, such as capacitors or batteries, due to its unique properties.
Problems solved by this technology:
- Improved performance: The specific combination of materials and layers in the semiconductor device can enhance its performance, such as increased memory retention or improved sensing capabilities.
- Stability: The ferroelectric or antiferroelectric layer and the interfacial layers contribute to the stability and reliability of the device, reducing potential issues like data loss or degradation over time.
Benefits of this technology:
- Enhanced functionality: The semiconductor device offers improved functionality compared to conventional devices, enabling advanced memory storage or sensing capabilities.
- Increased efficiency: The unique combination of materials and layers can lead to increased efficiency in energy storage or sensor applications.
- Reliability: The stability provided by the ferroelectric or antiferroelectric layer and the interfacial layers ensures the long-term reliability of the device.
Original Abstract Submitted
A semiconductor device includes a lower structure; a plurality of lower electrodes on the lower structure; an upper electrode on the plurality of lower electrodes; a dielectric layer between the plurality of lower electrodes and the upper electrode, and including a ferroelectric layer or an antiferroelectric layer; and a plurality of interfacial layers between the plurality of lower electrodes and the dielectric layer, wherein the plurality of interfacial layers include a first layer contacting the plurality of lower electrodes, and including a first metal element, a second metal element, different from the first metal element, and elemental nitrogen; and a second layer between the first layer and the dielectric layer, and including the first metal element, the second metal element, and elemental oxygen, and wherein a concentration of the second metal element in the first layer is lower than a concentration of the second metal element in the second layer.
