18314566. PHOTORESIST AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 PHOTORESIST AND FORMATION METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTORESIST AND FORMATION METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PHOTORESIST AND FORMATION METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jui-Hsiung Liu of Taipei City (TW)
Pin-Chia Liao of Taoyuan City (TW)
Ting-An Lin of Taoyuan City (TW)
Ting-An Shih of Taichung City (TW)
Yu-Fang Tseng of New Taipei City (TW)
Burn Jeng Lin of Hsinchu City (TW)
Tsai-Sheng Gau of Hsinchu City (TW)
Po-Hsiung Chen of Taichung City (TW)
Po-Wen Chiu of Hsinchu City (TW)
PHOTORESIST AND FORMATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18314566 titled 'PHOTORESIST AND FORMATION METHOD THEREOF
Simplified Explanation
The method of manufacturing a semiconductor device described in the abstract involves forming a photoresist layer with a specific composition over a material layer on a substrate. The photoresist layer includes a solvent and a first photo-active compound dissolved in the solvent, represented by specific chemical formulas.
- The semiconductor device manufacturing process involves the formation of a photoresist layer over a material layer on a substrate.
- The photoresist layer includes a solvent and a first photo-active compound dissolved in the solvent, represented by specific chemical formulas (A1) or (A2).
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning and etching of semiconductor materials, improving the overall performance and reliability of semiconductor devices.
Benefits
- Enhanced precision in semiconductor device manufacturing - Improved performance and reliability of semiconductor devices - Cost-effective production process
Potential Commercial Applications
"Semiconductor Device Manufacturing Method Using Specific Photoresist Composition" can find applications in the semiconductor industry for producing high-quality and reliable semiconductor devices efficiently.
Possible Prior Art
One possible prior art could be the use of different photoresist compositions in semiconductor device manufacturing processes to achieve specific patterning and etching results.
Unanswered Questions
How does this method compare to existing semiconductor manufacturing techniques?
This article does not provide a direct comparison between this method and existing semiconductor manufacturing techniques. Further research or experimentation may be needed to determine the advantages and limitations of this method compared to others.
What are the long-term implications of using this specific photoresist composition in semiconductor device manufacturing?
The article does not delve into the long-term implications of using this specific photoresist composition. Future studies could explore the durability, stability, and performance of semiconductor devices manufactured using this method over an extended period.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2):
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Jui-Hsiung Liu of Taipei City (TW)
- Pin-Chia Liao of Taoyuan City (TW)
- Ting-An Lin of Taoyuan City (TW)
- Ting-An Shih of Taichung City (TW)
- Yu-Fang Tseng of New Taipei City (TW)
- Burn Jeng Lin of Hsinchu City (TW)
- Tsai-Sheng Gau of Hsinchu City (TW)
- Po-Hsiung Chen of Taichung City (TW)
- Po-Wen Chiu of Hsinchu City (TW)
- G03F7/004
- G03F7/027
- H01L21/027