18311772. TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION simplified abstract (SK hynix Inc.)
TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION
Organization Name
Inventor(s)
Gyeong Ho Hyun of Icheon-si Gyeonggi-do (KR)
TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18311772 titled 'TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION
Simplified Explanation
The abstract describes a test device with a test memory device, an insulation layer, and a charge injection electrode for injecting charge into the memory device based on voltage.
- Test device includes:
* Test memory device with memory layer and gate electrode layer on semiconductor substrate * Insulation layer arranged on the test memory device * Charge injection electrode arranged on insulation layer
- Potential Applications:**
This technology could be used in the development and testing of semiconductor memory devices, particularly in the evaluation of charge injection mechanisms.
- Problems Solved:**
This technology helps in understanding and analyzing the behavior of charge injection in memory devices, which is crucial for improving their performance and reliability.
- Benefits:**
- Enhanced testing capabilities for memory devices - Improved understanding of charge injection processes - Potential for optimizing memory device performance
- Potential Commercial Applications:**
"Enhancing Memory Device Testing with Charge Injection Technology"
- Possible Prior Art:**
Prior art may include research papers or patents related to charge injection mechanisms in semiconductor devices.
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- Unanswered Questions:
- How does this technology compare to existing methods of charge injection testing in memory devices?
This article does not provide a direct comparison with existing methods, leaving room for further exploration of the advantages and limitations of this approach.
- What are the specific voltage ranges and charge injection levels that can be achieved with this technology?
The abstract does not delve into the specific voltage levels or charge injection capabilities of the device, which could be important factors for understanding its practical applications.
Original Abstract Submitted
A test device may include a test memory device, an insulation layer and a charge injection electrode. The test memory device may include a memory layer and a gate electrode layer on a semiconductor substrate. The insulation layer may be arranged on the test memory device. The charge injection electrode may be arranged on the insulation layer to inject a charge into the test memory device based on a voltage.
