18310715. TECHNIQUES FOR MEMORY CELL RESET USING DUMMY WORD LINES simplified abstract (Micron Technology, Inc.)
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TECHNIQUES FOR MEMORY CELL RESET USING DUMMY WORD LINES
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TECHNIQUES FOR MEMORY CELL RESET USING DUMMY WORD LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18310715 titled 'TECHNIQUES FOR MEMORY CELL RESET USING DUMMY WORD LINES
Simplified Explanation
The patent application describes methods, systems, and devices for resetting memory cells using dummy word lines. Here is a simplified explanation of the abstract:
- The memory device uses dummy word lines to connect a voltage node with a bit line during a reset operation.
- This allows the bit line to be supplied with a reset voltage from the voltage node.
- The memory device then activates word lines to connect the bit line with memory cells, supplying them with the reset voltage to reset them.
- During the reset operation, certain components of a sense amplifier coupled with the bit line may be disabled to support the voltage node supplying the reset voltage.
Potential applications of this technology:
- Memory devices, such as flash memory or DRAM, can benefit from this technique for resetting memory cells.
- It can be used in various electronic devices that rely on memory, such as smartphones, tablets, computers, and IoT devices.
Problems solved by this technology:
- Resetting memory cells is a crucial operation in memory devices, and this technique provides an efficient and reliable way to achieve it.
- By using dummy word lines and disabling certain components, the voltage node can supply the reset voltage to the bit line without interference, ensuring proper resetting of memory cells.
Benefits of this technology:
- Improved reliability and efficiency in resetting memory cells.
- Reduces the chances of errors or inconsistencies during the reset operation.
- Enables faster and more accurate data storage and retrieval in memory devices.
Original Abstract Submitted
Methods, systems, and devices for techniques for memory cell reset using dummy word lines are described. A memory device may activate, as part of a reset operation, one or more dummy word lines to couple a voltage node with a bit line to supply the bit line with a reset voltage supplied to the voltage node. The memory device may then activate one or more word lines to couple the bit line with one or more memory cells to supply the one or more memory cells with the reset voltage such that the one or more memory cells are reset. In some cases, the memory device may disable one or more components of a sense amplifier coupled with the bit line during the reset operation to support the voltage node supplying the bit line with the reset voltage.
