18310300. METAL WIRING OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
- 1 METAL WIRING OF SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL WIRING OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METAL WIRING OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seong Ho Choi of Icheon-si (KR)
Chang Man Son of Icheon-si (KR)
METAL WIRING OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18310300 titled 'METAL WIRING OF SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a metal wiring structure in a semiconductor device, involving a first metal line and a contact metal passing through a dielectric layer.
- The metal wiring structure includes a first metal line in a first metal layer with an opening in a first region.
- A contact metal passes through a dielectric layer under the first metal layer near the opening and is connected to the first metal line around the opening.
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This innovation helps improve the efficiency and performance of semiconductor devices by providing a reliable and efficient metal wiring structure.
Benefits
The benefits of this technology include enhanced connectivity, reduced signal interference, and increased overall functionality of semiconductor devices.
Potential Commercial Applications
The metal wiring structure described in the patent application has potential commercial applications in the semiconductor industry, particularly in the manufacturing of advanced electronic devices.
Possible Prior Art
One possible prior art in this field could be the use of similar metal wiring structures in previous semiconductor devices to improve signal transmission and reduce power consumption.
Unanswered Questions
How does this technology compare to existing metal wiring structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing metal wiring structures in semiconductor devices. Further research or testing may be needed to determine the advantages of this innovation over current solutions.
What are the potential challenges or limitations of implementing this metal wiring structure in semiconductor devices?
The article does not address any potential challenges or limitations that may arise during the implementation of this metal wiring structure. Additional studies or experiments could help identify and overcome any obstacles in utilizing this technology effectively.
Original Abstract Submitted
A metal wiring of a semiconductor device may include: a first metal line disposed in a first metal layer, and defined with an opening in a first region; and a contact metal passing through a dielectric layer under the first metal layer adjacent to the opening and connected to the first metal line around the opening.
