18310073. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyuncheol Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18310073 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a chip region and an edge region, where at least one coarse key pattern is divided into fine key patterns on the edge region. These fine key patterns extend in one direction and are spaced apart from each other in a perpendicular direction. Each fine key pattern consists of a first key pattern and a second key pattern, with the second key pattern wrapping around the first key pattern on opposite sides.
- The semiconductor device includes a substrate with a chip region and an edge region.
- Coarse key patterns on the edge region are divided into fine key patterns.
- Fine key patterns extend in one direction and are spaced apart in a perpendicular direction.
- Each fine key pattern consists of a first key pattern and a second key pattern wrapping around the first key pattern.
- Potential Applications
- Semiconductor manufacturing
- Integrated circuit design
- Problems Solved
- Improving alignment and registration accuracy in semiconductor devices
- Enhancing overall device performance and reliability
- Benefits
- Increased precision in chip fabrication
- Reduced errors in device assembly
- Improved functionality and longevity of semiconductor devices
Original Abstract Submitted
A semiconductor device may include a substrate including a chip region and an edge region enclosing the chip region, and at least one coarse key pattern divided into fine key patterns on the edge region, extend in a first direction and are spaced apart from each other in a second direction crossing the first direction. Each of the fine key patterns may include a first key pattern, extending in the first direction, and a second key pattern including a first portion extending along a side surface of the first key pattern, and a second portion extending along an opposite side surface of the first key pattern. A width of each of the first and second portions may be smaller than a width of the first key pattern, when measured in the second direction.
