18309172. INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chia-Lin Hsu of Hsinchu (TW)

Yu-Ti Su of Hsinchu (TW)

INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18309172 titled 'INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD

Simplified Explanation

The abstract describes an IC device with first and second CMOS structures in n-type doped regions of a substrate, including common gate and drain terminals, NMOS and PMOS body and source contacts, and electrical connections between them.

  • The IC device includes first and second CMOS structures in n-type doped regions of a substrate.
  • The first CMOS structure has a common gate terminal, first NMOS body and source contacts, and first PMOS body and source contacts.
  • The second CMOS structure has a common drain terminal, second NMOS body and source contacts, and second PMOS body and source contacts.
  • There is a first electrical connection from the common drain terminal to the common gate terminal.
  • A clamp device with a diode is included, with a second electrical connection from the diode's cathode to the first PMOS body and source contacts, and a third electrical connection from the diode's anode to the first NMOS body and source contacts.
  • The second and third electrical connections are positioned between the substrate and a third metal layer of the IC device.

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      1. Potential Applications

This technology can be applied in integrated circuits, semiconductor devices, and electronic systems requiring efficient electrical connections and protection mechanisms.

      1. Problems Solved

1. Improved electrical connections between CMOS structures in IC devices. 2. Enhanced protection against electrical surges and overvoltage conditions.

      1. Benefits

1. Increased reliability and performance of IC devices. 2. Enhanced durability and longevity of electronic systems. 3. Improved efficiency in managing electrical connections and protecting against voltage spikes.

      1. Potential Commercial Applications
        1. Enhancing IC Device Performance with Advanced Electrical Connections

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      1. Possible Prior Art

There may be prior art related to the integration of diodes for protection in IC devices, as well as techniques for optimizing electrical connections between CMOS structures.

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        1. Unanswered Questions
      1. How does this technology compare to existing methods for protecting IC devices from electrical surges?

The abstract does not provide a direct comparison with existing methods for protecting IC devices from electrical surges. Further research or analysis may be needed to evaluate the effectiveness and efficiency of this technology in comparison to other protection mechanisms.

      1. What are the specific industries or sectors that could benefit the most from this technology?

The abstract does not specify the specific industries or sectors that could benefit the most from this technology. Additional market research or industry analysis may be required to identify the target markets and potential applications for this innovation.


Original Abstract Submitted

An IC device includes first and second CMOS structures positioned in n-type doped regions of a substrate, the first CMOS structure including a common gate terminal, first NMOS body and source contacts, and first PMOS body and source contacts, the second CMOS structure including a common drain terminal, second NMOS body and source contacts, and second PMOS body and source contacts. The IC device includes a first electrical connection from the common drain terminal to the common gate terminal, a clamp device including a diode, a second electrical connection from a cathode of the diode to the first PMOS body and source contacts, and a third electrical connection from an anode of the of the diode to the first NMOS body and source contacts, and entireties of each of the second and third electrical connections are positioned between the substrate and a third metal layer of the IC device.

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