18308982. SEMICONDUCTOR STRUCTURE WITH TESTLINE AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR STRUCTURE WITH TESTLINE AND METHOD OF FABRICATING SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yu-Ching Chiu of Hsinchu City (TW)

Chih-Kuang Kao of Chu-pei City (TW)

Huei-Wen Yang of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE WITH TESTLINE AND METHOD OF FABRICATING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18308982 titled 'SEMICONDUCTOR STRUCTURE WITH TESTLINE AND METHOD OF FABRICATING SAME

Simplified Explanation

The abstract of the patent application describes a testline structure for a semiconductor device. The structure includes layers of substrate, frontside insulating layer, and backside insulating layer. It also includes a probe pad structure that extends vertically through these layers, consisting of a frontside probe pad in the frontside insulating layer and a backside probe pad in the backside insulating layer.

• The testline structure is designed for semiconductor devices.
• It includes layers of substrate, frontside insulating layer, and backside insulating layer.
• The probe pad structure extends through these layers.
• It consists of a frontside probe pad and a backside probe pad.

Potential applications of this technology:

• Testing and characterization of semiconductor devices.
• Quality control and reliability testing in semiconductor manufacturing.

Problems solved by this technology:

• Provides a convenient and efficient way to access and test semiconductor devices.
• Ensures proper electrical contact between the test equipment and the device under test.

Benefits of this technology:

• Simplifies the testing process for semiconductor devices.
• Reduces the risk of damage to the device during testing.
• Improves the accuracy and reliability of test results.

Original Abstract Submitted

A testline structure of a semiconductor device includes a substrate layer, a frontside insulating layer atop the substrate layer, a backside insulating layer under the substrate layer, and a probe pad structure vertically extending through the frontside insulating layer, the substrate layer, and the backside insulating layer. The probe pad structure includes a frontside probe pad in the frontside insulating layer and a backside probe pad in the backside insulating layer.