18307456. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)

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SEMICONDUCTOR DEVICE

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Kenji Suzuki of Tokyo (JP)

Yuki Haraguchi of Tokyo (JP)

Haruhiko Minamitake of Tokyo (JP)

Taiki Hoshi of Tokyo (JP)

Hidenori Koketsu of Tokyo (JP)

Yusuke Miyata of Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18307456 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a first buffer layer that includes three regions: a first region containing protons, a second region between the first region and a first principal surface containing protons, and a third region between the second region and the first principal surface. The impurity concentration profile of the first buffer layer has a maximum value in the second region, a kink at the boundary point between the first and second regions, a value at the boundary point that is at least 80% of the maximum value, and a distribution of the third region that is longer than or equal to 5 μm and has an impurity concentration lower than the value at the boundary point and lower than or equal to 5.0×10/cm.

  • The first buffer layer has three regions: a first region with protons, a second region between the first region and a first principal surface with protons, and a third region between the second region and the first principal surface.
  • The impurity concentration profile of the first buffer layer has a maximum value in the second region.
  • There is a kink at the boundary point between the first and second regions, which relaxes or stops a decrease from the maximum value.
  • The value at the boundary point is at least 80% of the maximum value.
  • The third region has a distribution that is longer than or equal to 5 μm and has an impurity concentration lower than the value at the boundary point and lower than or equal to 5.0×10/cm.

Potential Applications

  • This technology could be applied in the field of semiconductor devices.
  • It may find use in the development of high-performance electronic components.

Problems Solved

  • The first buffer layer with its specific impurity concentration profile solves the problem of optimizing the performance of semiconductor devices.
  • It addresses the need for improved control over impurity concentration in different regions of a semiconductor device.

Benefits

  • The optimized impurity concentration profile allows for enhanced performance and functionality of semiconductor devices.
  • The kink at the boundary point helps to maintain a higher impurity concentration, leading to improved device performance.
  • The longer distribution of the third region with lower impurity concentration provides better control over the overall impurity profile.


Original Abstract Submitted

A first buffer layer includes: a first region containing protons and in contact with a drift layer; a second region between the first region and a first principal surface containing protons, and in contact with the first region; and a third region between the second region of the first buffer layer and the first principal surface. An impurity concentration profile of the first buffer layer includes: a maximum value in the second region; a kink at a boundary point between the first region and the second region, relaxing or stopping a decrease from the maximum value; a value at the boundary point higher than or equal to 80% of the maximum value; and a distribution of the third region longer than or equal to 5 μm and having an impurity concentration lower than the value at the boundary point and lower than or equal to 5.0×10/cm.

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