18305708. SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ming-Hsun Lin of Hsinchu City (TW)
SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18305708 titled 'SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
Simplified Explanation
The abstract describes an integrated circuit device with landing circuitry, including a stair-shaped profile that extends into a silicon substrate. The landing circuitry consists of electrode layers interspersed with dielectric material and spacer structures on the ends of the electrode layers.
- Integrated circuit device with landing circuitry
- Stair-shaped profile extending into silicon substrate
- Electrode layers interspersed with dielectric material
- Spacer structures on ends of electrode layers
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Memory devices
- Integrated circuits
Problems Solved
The technology addresses the following issues:
- Efficient use of space in integrated circuits
- Improved performance of memory devices
- Enhanced reliability of semiconductor devices
Benefits
The benefits of this technology include:
- Increased integration density
- Enhanced performance
- Improved reliability
Potential Commercial Applications
The technology could have commercial applications in:
- Semiconductor industry
- Electronics manufacturing
- Memory chip production
Possible Prior Art
One possible prior art for this technology could be the use of spacer structures in semiconductor devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing landing circuitry designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing landing circuitry designs to evaluate performance and efficiency.
What are the specific manufacturing processes involved in creating the stair-shaped profile and spacer structures in the integrated circuit device?
The article does not detail the specific manufacturing processes used to create the stair-shaped profile and spacer structures in the integrated circuit device.
Original Abstract Submitted
Some implementations described herein include an integrated circuit device including landing circuitry and methods of formation. The landing circuitry, which may be part of a trench capacitor region, includes a stair-shaped profile that extends into a silicon substrate of the integrated circuit device. The landing circuitry includes electrode layers of the trench capacitor region interspersed with layers of a dielectric material. The landing circuitry further includes spacer structures on ends of the electrode layers along the stair-shaped profile.
