18303937. METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME
Organization Name
Inventor(s)
METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18303937 titled 'METHOD OF READING DATA FROM SELF-SELECTING MEMORY, SELF-SELECTING MEMORY PERFORMING THE SAME AND METHOD OF OPERATING SELF-SELECTING MEMORY USING THE SAME
Simplified Explanation
The method described in the patent application involves reading data from a self-selecting memory by generating a read pulse with a polarity opposite to that of a write pulse. The read pulse is applied to a target memory cell in the self-selecting memory, with the slope of the second edge of the read pulse adjusted to increase undershoot or overshoot.
- Write pulse writes data into target memory cell
- Read pulse has opposite polarity to write pulse
- Read pulse applied to target memory cell
- Read pulse has adjusted second edge slope to increase undershoot or overshoot
Potential Applications
The technology described in this patent application could be applied in:
- Memory systems
- Data storage devices
- Embedded systems
Problems Solved
This technology addresses the following issues:
- Efficient data reading from self-selecting memory
- Minimizing errors in data retrieval
- Improving overall memory performance
Benefits
The benefits of this technology include:
- Enhanced data reading accuracy
- Increased memory efficiency
- Improved system performance
Potential Commercial Applications
The technology could find commercial applications in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art related to this technology is the use of read and write pulses in memory systems to access and store data efficiently.
Unanswered Questions
How does the adjusted second edge slope of the read pulse impact data retrieval speed?
The article does not provide specific details on how the adjusted slope affects the speed of data retrieval from the memory cells.
What are the potential challenges in implementing this technology in real-world memory systems?
The article does not address the potential challenges or limitations that may arise when implementing this technology in practical memory systems.
Original Abstract Submitted
A method of reading data from a self-selecting memory includes generating a read pulse that has a polarity opposite to that of a write pulse. The write pulse writes data into a target memory cell in the self-selecting memory. The read pulse is applied to the target memory cell. The read pulse has a first edge that is a starting point of the read pulse and a second edge that is an ending point of the read pulse. A slope of the second edge of the read pulse is adjusted such that an undershoot or overshoot on the second edge of the read pulse increases.
