18303503. VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK hynix Inc.)
Contents
VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Jung Hyeok Kwak of Icheon-si (KR)
Ku Youl Jung of Icheon-si (KR)
Jin Won Jung of Icheon-si (KR)
VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18303503 titled 'VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The patent application describes variable resistance elements and semiconductor devices that incorporate these elements. Here is a simplified explanation of the abstract:
- Variable resistance elements with a free layer that changes magnetization direction upon application of a magnetic field, a pinned layer with a fixed magnetization direction, and a tunnel barrier layer with a metal chalcogenide material.
- Explanation:**
- Variable resistance element with free layer - Magnetization direction changes with magnetic field - Pinned layer with fixed magnetization direction - Tunnel barrier layer with metal chalcogenide material
- Potential Applications:**
- Data storage devices - Magnetic sensors - Spintronics applications
- Problems Solved:**
- Control of resistance in semiconductor devices - Efficient data storage and retrieval - Enhanced performance in magnetic sensors
- Benefits:**
- Improved data storage capacity - Faster data access - Energy-efficient semiconductor devices
- Potential Commercial Applications:**
- Magnetic memory devices - Magnetic field sensors - Spin-based logic devices
- Possible Prior Art:**
- Previous patents on variable resistance elements in semiconductor devices - Research papers on magnetization control in tunnel barrier layers
- Unanswered Questions:**
1. How does the magnetization direction switching in the free layer affect the overall performance of the semiconductor device?
*Answer: The magnetization direction switching in the free layer plays a crucial role in controlling the resistance of the device, which directly impacts its functionality and efficiency.*
2. Are there any limitations to the use of metal chalcogenide materials in the tunnel barrier layer?
*Answer: While metal chalcogenide materials offer unique properties for the tunnel barrier layer, there may be challenges related to stability, compatibility, or manufacturing processes that need to be addressed for practical applications.*
Original Abstract Submitted
Variable resistance elements and semiconductor devices including the variable resistance elements are disclosed. In some implementations, a variable resistance element may include a variable resistance element may include a free layer having a variable magnetization direction that switches between different magnetization directions upon application of a magnetic field, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer and including a metal chalcogenide having a cubic crystal structure.
