18301842. MEMORY TEST DRIVE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MEMORY TEST DRIVE
Organization Name
Inventor(s)
Jong Min Park of SUWON-SI (KR)
Vladimir Vladimirovich Egay of SEOUL (KR)
MEMORY TEST DRIVE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18301842 titled 'MEMORY TEST DRIVE
Simplified Explanation
The abstract describes a memory test device that includes a command feature vector extractor and an address feature vector extractor.
- The command feature vector extractor extracts a command feature vector based on the commands executed on memory cells.
- The address feature vector extractor extracts an address feature vector based on address-related information indicating the locations of the memory cells executing the commands.
Potential applications of this technology:
- Memory testing in electronic devices such as computers, smartphones, and tablets.
- Quality control in memory manufacturing processes.
- Debugging and troubleshooting memory-related issues in electronic systems.
Problems solved by this technology:
- Efficiently extracting command and address feature vectors from memory cells.
- Enabling accurate memory testing and analysis.
- Improving the reliability and performance of electronic devices.
Benefits of this technology:
- Enhanced memory testing capabilities.
- Improved quality control in memory manufacturing.
- Faster and more accurate debugging and troubleshooting of memory-related issues.
- Increased reliability and performance of electronic devices.
Original Abstract Submitted
A memory test device is provided including a command feature vector extractor and an address feature vector extractor. The command feature vector extractor extracts a command feature vector, based commands executed on memory cells among a plurality of memory cells. The address feature vector extractor extracts an address feature vector, based on address-related information indicating locations of the memory cells executing the commands.
