18300579. SEMICONDUCTOR DEVICE INCLUDING CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING CHANNEL STRUCTURE
Organization Name
Inventor(s)
Deokhwan Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING CHANNEL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18300579 titled 'SEMICONDUCTOR DEVICE INCLUDING CHANNEL STRUCTURE
Simplified Explanation
The semiconductor device described in the patent application includes:
- An upper conductive line on a substrate
- A channel structure adjacent to the upper conductive line
- A gate dielectric film between the channel structure and the upper conductive line
- A conductive contact pattern electrically connected to the channel structure
- The channel structure consists of a main channel portion with an oxide semiconductor layer of a first composition
- A channel contact portion between the main channel portion and the conductive contact pattern, made of a material with a second composition different from the first composition
Potential applications of this technology:
- Advanced semiconductor devices
- Improved performance in electronic devices
- Enhanced efficiency in power management systems
Problems solved by this technology:
- Enhancing conductivity in semiconductor devices
- Improving the overall performance of electronic components
- Addressing challenges in power distribution and management
Benefits of this technology:
- Increased efficiency in electronic devices
- Enhanced conductivity for better performance
- Improved power management capabilities
Original Abstract Submitted
A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically connected to the channel structure. The channel structure includes a main channel portion including an oxide semiconductor layer having a first composition, and a channel contact portion between the main channel portion and the conductive contact pattern. The channel contact portion is in contact with the conductive contact pattern and includes a material having a second composition that is different from the first composition.
