18300021. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byoungjae Bae of Suwon-si (KR)
Hyungjiong Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18300021 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
- A semiconductor device with an etch stop layer, insulating layer, and contact structure. - The contact structure consists of three conductive layers with a natural oxide film between them. - The conductive layers are made of metal or metal nitride, while the natural oxide film is made of metal oxide.
Potential Applications
- Semiconductor manufacturing - Electronics industry - Integrated circuits
Problems Solved
- Improved conductivity and reliability in semiconductor devices - Enhanced performance of electronic components - Better integration of different materials in device fabrication
Benefits
- Increased efficiency in semiconductor device operation - Enhanced durability and longevity of electronic components - Improved overall performance of integrated circuits
Original Abstract Submitted
A semiconductor device includes an etch stop layer, an insulating layer on the etch stop layer, and a contact structure passing through the etch stop layer and the insulating layer, the contact structure including a first conductive layer, a second conductive layer having a side surface and a lower surface facing the first conductive layer, a third conductive layer on an upper surface of the second conductive layer, and a natural oxide film between the first conductive layer and the second conductive layer and between the second conductive layer and the third conductive layer, the first to third conductive layers including metal or metal nitride, and the natural oxide film including metal oxide.
