18297266. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18297266 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that consists of two substrate structures connected to each other. The first substrate structure includes a plate layer, gate electrodes, channel structures, and bonding metal layers. The second substrate structure includes active regions, device isolation layers, circuit devices, and bonding metal layers.
- The first substrate structure includes a plate layer, gate electrodes, channel structures, and bonding metal layers.
- The second substrate structure includes active regions, device isolation layers, circuit devices, and bonding metal layers.
- The device isolation layers in the second substrate structure have different heights.
- The active regions in the second substrate structure are separated by the device isolation layers.
- The first and second substrate structures are connected through the bonding metal layers.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improved connectivity and integration of different substrate structures
- Enhanced performance and functionality of semiconductor devices
- Efficient use of space and resources in semiconductor manufacturing
Benefits of this technology:
- Increased efficiency and performance of semiconductor devices
- Improved connectivity and integration of different components
- Enhanced functionality and capabilities of integrated circuits
- Cost-effective manufacturing process
Original Abstract Submitted
A semiconductor device may include a first substrate structure including a plate layer, gate electrodes stacked on the plate layer, channel structures penetrating through the gate electrodes, and first bonding metal layers on the channel structures; and a second substrate structure connected to the first substrate structure, and including a substrate having active regions, device isolation layers in the substrate defining the active regions, circuit devices on one surface of the substrate, and second bonding metal layers connected to the first bonding metal layers, the device isolation layers including first device isolation layers and a second device isolation layer having different heights, and the active regions including first active regions spaced apart by the first device isolation layers and connected to each other by the substrate, and second active regions separated from the first active regions by the second device isolation layer.
