18296016. LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT simplified abstract (Samsung Display Co., Ltd.)

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LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT

Organization Name

Samsung Display Co., Ltd.

Inventor(s)

Sang Ho Jeon of Yongin-si (KR)

Ji Song Chae of Yongin-si (KR)

LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18296016 titled 'LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT

Simplified Explanation

The abstract describes a patent application for a light emitting element that consists of an N-type semiconductor layer with zinc oxide, a P-type semiconductor layer, and an active layer with a quantum well structure made of a barrier layer and a well layer containing zinc oxide.

  • N-type semiconductor layer includes zinc oxide
  • P-type semiconductor layer
  • Active layer with quantum well structure
  • Quantum well structure has barrier layer and well layer with zinc oxide

Potential Applications

The technology described in the patent application could be used in:

  • LED lighting
  • Display panels
  • Optoelectronic devices

Problems Solved

This technology addresses issues such as:

  • Improving efficiency of light emitting elements
  • Enhancing performance of optoelectronic devices

Benefits

The benefits of this technology include:

  • Higher brightness levels
  • Lower power consumption
  • Longer lifespan of light emitting elements

Potential Commercial Applications

The technology could be applied in various commercial sectors such as:

  • Consumer electronics
  • Automotive lighting systems
  • Medical devices

Possible Prior Art

One possible prior art could be the use of quantum well structures in light emitting elements, but the specific combination of materials and layers described in this patent application may be novel.

What is the expected lifespan of light emitting elements using this technology?

The expected lifespan of light emitting elements using this technology is anticipated to be longer due to the improved efficiency and performance of the device.

How does the efficiency of this technology compare to traditional light emitting elements?

The efficiency of this technology is expected to be higher compared to traditional light emitting elements due to the unique quantum well structure and materials used in the active layer.


Original Abstract Submitted

A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.