18295966. HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES
Organization Name
Inventor(s)
HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18295966 titled 'HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES
Simplified Explanation
The abstract describes an image sensor that includes multiple substrates and wiring structures. Here is a simplified explanation of the abstract:
- The image sensor consists of a first substrate with a first transistor and a first set of wiring structures.
- A second substrate extends on top of the first set of wiring structures and has a second transistor connected to a second wiring structure within the first set.
- A second set of wiring structures extends on the second substrate.
- A third substrate is provided on the second set of wiring structures.
- A microlens is present on the light receiving surface of the third substrate.
- A light sensing element is embedded within the third substrate.
- A transfer gate (TG) extends into a portion of the third substrate, adjacent to the light sensing element, and is connected to a first wiring structure within the second set of wiring structures.
- A floating diffusion (FD) region is present within the third substrate, adjacent to the TG, and connected to a second wiring structure within the second set of wiring structures.
Potential applications of this technology:
- Image sensors in digital cameras and smartphones.
- Surveillance cameras and security systems.
- Medical imaging devices.
- Automotive cameras for advanced driver-assistance systems (ADAS).
Problems solved by this technology:
- Integration of multiple transistors and wiring structures in an image sensor.
- Efficient light sensing and transfer of signals within the sensor.
- Enhanced image quality and sensitivity.
Benefits of this technology:
- Improved image resolution and quality.
- Higher sensitivity to light.
- Compact and efficient design.
- Enables the development of smaller and more advanced imaging devices.
Original Abstract Submitted
An image sensor includes a first substrate having a first transistor integrated therein, and a first plurality of wiring structures on the first substrate. The first plurality of wiring structures include a first wiring structure electrically connected to the first transistor. A second substrate extends on the first plurality of wiring structures, and has a second transistor integrated therein, which is electrically connected to a second wiring structure within the first plurality of wiring structures. A second plurality of wiring structures extend on the second substrate. A third substrate is provided on the second plurality of wiring structures. A microlens extends on a light receiving surface of the third substrate. A light sensing element extends within the third substrate. A transfer gate (TG) extends into a portion of the third substrate, extends adjacent the light sensing element, and is electrically connected to a first wiring structure within the second plurality of wiring structures. A floating diffusion (FD) region extends within the third substrate and adjacent the TG. The FD region is electrically connected to a second wiring structure within the second plurality of wiring structures.
