18295433. METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
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METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18295433 titled 'METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device. Here is a simplified explanation of the abstract:
- A sacrificial layer and a support layer are stacked on a substrate.
- Bottom electrodes are formed, penetrating the sacrificial layer and the support layer to come into contact with the substrate.
- The support layer is patterned to form a support pattern that connects the bottom electrodes to each other.
- The sacrificial layer is removed to expose the surfaces of the bottom electrodes.
- A conductive layer is deposited on the exposed surfaces of the bottom electrodes and the surface of the support pattern.
- The conductive layer is etched, selectively removing it on the support pattern to expose the surface of the support pattern.
- The deposition of the conductive layer and the etching of the conductive layer are alternately performed in the same chamber.
Potential applications of this technology:
- Fabrication of semiconductor devices, such as transistors, diodes, or integrated circuits.
- Manufacturing of electronic components for various industries, including telecommunications, consumer electronics, and automotive.
Problems solved by this technology:
- Provides a method for fabricating semiconductor devices with improved electrical connections between bottom electrodes.
- Enables the formation of complex support patterns that connect multiple bottom electrodes.
- Facilitates the deposition and etching processes by performing them in the same chamber, reducing the need for multiple equipment setups.
Benefits of this technology:
- Enhanced performance and reliability of semiconductor devices due to improved electrical connections.
- Increased design flexibility by allowing the formation of intricate support patterns.
- Cost and time savings in the fabrication process by performing deposition and etching in a single chamber.
Original Abstract Submitted
A method for fabricating a semiconductor device includes sequentially stacking a sacrificial layer and a support layer on a substrate, forming bottom electrodes penetrating the sacrificial layer and the support layer to come into contact with the substrate, patterning the support layer to form a support pattern that connects the bottom electrodes to each other, removing the sacrificial layer to expose surfaces of the bottom electrodes, depositing a conductive layer on the exposed surfaces of the bottom electrodes and a surface of the support pattern, and etching the conductive layer. The etching the conductive layer includes selectively removing the conductive layer on the support pattern to expose the surface of the support pattern. The depositing the conductive layer and the etching the conductive layer are alternately performed in a same chamber.
