18274747. Power Semiconductor Device simplified abstract (HITACHI ASTEMO, LTD.)
Contents
- 1 Power Semiconductor Device
Power Semiconductor Device
Organization Name
Inventor(s)
Yujiro Kaneko of Hitachinaka-shi (JP)
Yusuke Takagi of Hitachinaka-shi (JP)
Power Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18274747 titled 'Power Semiconductor Device
Simplified Explanation
The abstract describes a patent application related to a power semiconductor device where the distance between the power semiconductor elements and conductor plates is adjusted based on the heat generated by each element.
- The first power semiconductor element generates more heat than the second element.
- The distance from the end of the first power semiconductor element to the end of the conductor plate is greater than the distance from the end of the second power semiconductor element to the end of the conductor plate.
Potential Applications
This technology could be applied in various power semiconductor devices where managing heat dissipation is crucial, such as in electric vehicles, renewable energy systems, and industrial machinery.
Problems Solved
This innovation addresses the issue of uneven heat distribution in power semiconductor devices, which can lead to overheating and reduced efficiency. By optimizing the distance between the semiconductor elements and conductor plates, heat dissipation can be improved.
Benefits
- Enhanced thermal management - Improved overall performance and reliability of power semiconductor devices - Increased efficiency and longevity of the devices
Potential Commercial Applications
"Optimized Heat Dissipation in Power Semiconductor Devices" could find applications in industries such as automotive, renewable energy, and manufacturing, where high-performance power electronics are essential for operations.
Possible Prior Art
Prior art in the field of power semiconductor devices may include existing technologies for heat dissipation, such as heat sinks, thermal interface materials, and cooling systems designed to manage heat generated by semiconductor elements.
Unanswered Questions
How does this technology compare to traditional heat dissipation methods in power semiconductor devices?
This article does not directly compare the new technology to traditional methods of heat dissipation in power semiconductor devices.
What specific improvements in performance can be expected from implementing this technology?
The article does not provide detailed information on the specific performance improvements that can be achieved by implementing this technology.
Original Abstract Submitted
A first power semiconductor element and a second power semiconductor element of a power semiconductor device are such that, when heat generated by the first power semiconductor element is larger than heat generated by the second power semiconductor element, a first distance from an end of the first power semiconductor element to an end of the conductor plate is larger than a second distance from an end of the second power semiconductor element to an end, connected to the second power semiconductor element, of a second conductor plate.
