18260669. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Sony Semiconductor Solutions Corporation)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Sony Semiconductor Solutions Corporation
Inventor(s)
Takushi Shigetoshi of Kanagawa (JP)
Yoshiaki Yanagawa of Kanagawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18260669 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. The wiring layer is on the front surface of the semiconductor substrate. The first through hole goes through the semiconductor substrate from the back surface to the front surface, with its side wall covered by an insulating film. The first inner through electrode is formed along a part of the side wall of the first through hole.
- Semiconductor device with through electrode to reduce thermal stress
- Wiring layer on front surface of semiconductor substrate
- First through hole penetrates substrate with insulating film on side wall
- First inner through electrode formed along side wall of first through hole
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
- Reduction of thermal stress in semiconductor devices
- Improved reliability and performance
- Enhanced durability of devices
Benefits
- Increased longevity of semiconductor devices
- Improved thermal management
- Enhanced overall performance and efficiency
Original Abstract Submitted
In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the first through hole penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film. Furthermore, in the semiconductor device, the first inner through electrode is formed along a part of the side wall of the first through hole.
