18260255. SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
Contents
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
YOSHIAKI Yanagawa of KANAGAWA (JP)
TAKUSHI Shigetoshi of KANAGAWA (JP)
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18260255 titled 'SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a first substrate made of silicon, a first film covering surfaces of a hole-shaped portion in the first substrate, and a photosensitive second film covering at least part of a side surface of the hole-shaped portion with the first film in between.
- First substrate made of silicon
- First film covering surfaces of a hole-shaped portion
- Photosensitive second film covering side surface of the hole-shaped portion
- Potential Applications:**
- Semiconductor manufacturing
- Electronic devices
- Photovoltaic cells
- Problems Solved:**
- Creating through electrodes with desired shapes
- Improving semiconductor device performance
- Enhancing electronic device functionality
- Benefits:**
- Enhanced conductivity
- Improved device reliability
- Increased device efficiency
Original Abstract Submitted
Provided are a semiconductor device capable of constituting a through electrode having a desired shape, an electronic device, and a method for manufacturing a semiconductor device. The semiconductor device includes: a first substrate including silicon; a first film formed on at least some surfaces of a hole-shaped portion formed in the first substrate; and a photosensitive second film covering at least a part of a side surface of the hole-shaped portion with the first film interposed therebetween.
