18259145. Semiconductor Laser and Design Method Therefor simplified abstract (NIPPON TELEGRAPH AND TELEPHONE CORPORATION)

Semiconductor Laser and Design Method Therefor

Organization Name

NIPPON TELEGRAPH AND TELEPHONE CORPORATION

Inventor(s)

Takuma Tsurugaya of Musashino-shi, Tokyo (JP)

Shinji Matsuo of Musashino-shi, Tokyo (JP)

Semiconductor Laser and Design Method Therefor - A simplified explanation of the abstract

This abstract first appeared for US patent application 18259145 titled 'Semiconductor Laser and Design Method Therefor

Simplified Explanation

The semiconductor laser described in the patent application includes a Fabry-Perot type optical resonator composed of a first optical waveguide with waveguide type reflection units, a confinement portion, and a second optical waveguide serving as an extraction optical waveguide.

• The first optical waveguide has a first reflection unit and a second reflection unit, both with periodically modulated refractive index.
• The second optical waveguide extends from the confinement portion to the second reflection unit side and includes a third reflection unit at a location corresponding to the first reflection unit.

• • Potential Applications:**
• Telecommunications
• Optical data storage
• Laser printing
• Medical devices

• • Problems Solved:**
• Improved efficiency and performance of semiconductor lasers
• Enhanced optical resonator design
• Better control of light extraction in laser devices

• • Benefits:**
• Higher output power
• Greater wavelength stability
• Improved beam quality
• Enhanced reliability and lifespan of semiconductor lasers

Original Abstract Submitted

A semiconductor laser includes a first optical waveguide including a first reflection unit and a second reflection unit, and a confinement portion. The first reflection unit and the second reflection unit are waveguide type reflection units each having a structure in which the refractive index is periodically modulated. The first reflection unit, the confinement portion, and the second reflection unit constitute a Fabry-Perot type optical resonator. The semiconductor laser also includes a second optical waveguide disposed along a first optical waveguide to extend from the confinement portion to the second reflection unit side. The second optical waveguide serves as an extraction optical waveguide. Further, a third reflection unit formed continuously with the second optical waveguide is provided at a location corresponding to the first reflection unit.