18255407. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (TOKYO ELECTRON LIMITED)

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SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Organization Name

TOKYO ELECTRON LIMITED

Inventor(s)

Yuichi Furuya of Yamanashi (JP)

Masamichi Hara of Yamanashi (JP)

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18255407 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Simplified Explanation

The substrate processing apparatus described in the abstract is a device used to deposit a film on a substrate within a processing chamber. It includes a process gas supply, a vacuum pump, and a purge gas supply.

  • The apparatus deposits a film on a substrate by supplying a process gas containing a source gas and a carrier gas into the processing chamber.
  • The vacuum pump exhausts the interior of the processing chamber to maintain the desired pressure levels.
  • The purge gas supply introduces a purge gas, which includes a gas identical to the carrier gas, into the vacuum pump to assist in the exhaust process.

Potential Applications

The technology can be applied in semiconductor manufacturing, thin film deposition, and other industries requiring precise film coating processes.

Problems Solved

The apparatus solves the problem of ensuring a clean and controlled environment for depositing films on substrates by effectively removing process gases and impurities from the processing chamber.

Benefits

The benefits of this technology include improved film deposition accuracy, reduced contamination risks, and enhanced overall process efficiency.

Potential Commercial Applications

Potential commercial applications of this technology include semiconductor fabrication facilities, research institutions, and companies specializing in thin film coatings.

Possible Prior Art

One possible prior art in this field is the use of similar substrate processing apparatus with different gas compositions for film deposition processes.

Unanswered Questions

How does the apparatus handle variations in substrate size and shape during the film deposition process?

The apparatus may have mechanisms in place to adjust gas flow rates and chamber conditions based on the specific substrate dimensions to ensure uniform film deposition.

What safety measures are in place to prevent gas leaks or other hazards during operation?

Safety protocols such as gas sensors, pressure monitoring systems, and emergency shutdown procedures may be implemented to prevent accidents and ensure operator safety.


Original Abstract Submitted

A substrate processing apparatus according to an aspect of the present disclosure is an apparatus that deposits a film on a substrate disposed in a processing chamber, and includes a process gas supply configured to supply, into the processing chamber, a process gas including a source gas and a carrier gas that carries the source gas, a vacuum pump configured to exhaust an interior of the processing chamber, and a purge gas supply configured to supply a purge gas into the vacuum pump. The purge gas includes a first gas that is identical to the carrier gas.