18248740. METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE simplified abstract (THE REGENTS OF THE UNIVERSITY OF CALIFORNIA)
METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE
Organization Name
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor(s)
Srinivas Grandrothula of Ibaraki (JP)
Takeshi Kamikawa of Kyoto (JP)
METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18248740 titled 'METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE
Simplified Explanation
The abstract of the patent application describes a technology for integrating light extraction or guiding structures into light emitting devices. These structures are created using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.
- Light emitting devices with integrated light extraction or guiding structures
- Structures are fabricated using a lateral epitaxial growth technique
- Pattern is transferred from a growth restrict mask and/or host substrate to the epitaxial layers
Potential Applications
This technology has potential applications in various fields, including:
- Lighting industry
- Display technology
- Optical communication
- Photovoltaics
Problems Solved
The technology addresses several problems in the field of light emitting devices, such as:
- Low light extraction efficiency
- Inefficient light guiding
- Complex fabrication processes
Benefits
The use of this technology offers several benefits, including:
- Improved light extraction efficiency
- Enhanced light guiding capabilities
- Simplified fabrication processes
- Cost-effective production methods
Original Abstract Submitted
Light emitting devices having light extraction or guiding structures integrated in their epitaxial layers, wherein the light extraction and guiding structures are fabricated using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.
