18247784. Semiconductor Device and Multi-Turn Encoder simplified abstract (Mitsubishi Electric Corporation)

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Semiconductor Device and Multi-Turn Encoder

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Akio Kamimurai of Chiyoda-ku, Tokyo (JP)

Takeshi Musha of Chiyoda-ku, Tokyo (JP)

Semiconductor Device and Multi-Turn Encoder - A simplified explanation of the abstract

This abstract first appeared for US patent application 18247784 titled 'Semiconductor Device and Multi-Turn Encoder

Simplified Explanation

The patent application describes an environmental power generation device that charges a capacitor connected to a power supply line. When the power generation voltage reaches a certain level, a voltage comparison circuit sends a signal to power on the internal circuit of a semiconductor device. A setting change circuit allows for the adjustment of the power-on criterion voltage based on user input.

  • Environmental power generation device charges a capacitor connected to a power supply line
  • Voltage comparison circuit detects when the power generation voltage reaches a certain level
  • Signal from the voltage comparison circuit powers on the internal circuit of a semiconductor device
  • Setting change circuit allows for adjustment of the power-on criterion voltage based on user input

Potential Applications

  • Renewable energy generation systems
  • Energy harvesting devices
  • Power supply systems for remote or off-grid locations

Problems Solved

  • Efficient utilization of environmental power generation
  • Reliable power-on mechanism for semiconductor devices
  • Flexibility in adjusting power-on criterion voltage

Benefits

  • Increased energy efficiency
  • Improved reliability of semiconductor devices
  • Customizable power-on criterion voltage for different applications


Original Abstract Submitted

An environmental power generation device outputs power generation charges to a power supply line to which a capacitor is connected. When a power generation voltage corresponding to a charging voltage for the capacitor is equal to or higher than an power-on criterion voltage, a voltage comparison circuit outputs a voltage detection signal. An internal circuit of a semiconductor device is powered on in response to the voltage detection signal. A setting change circuit switches the power-on criterion voltage in accordance with a setting input.