18244555. Topological Insulator Based Spin Torque Oscillator Reader simplified abstract (Western Digital Technologies, Inc.)
Topological Insulator Based Spin Torque Oscillator Reader
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
Xiaoyong Liu of San Jose CA (US)
Zhanjie Li of Pleasanton CA (US)
Brian R. York of San Jose CA (US)
Cherngye Hwang of San Jose CA (US)
Kuok San Ho of Emerald Hills CA (US)
Hisashi Takano of Fujisawa-shi (JP)
Topological Insulator Based Spin Torque Oscillator Reader - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244555 titled 'Topological Insulator Based Spin Torque Oscillator Reader
Simplified Explanation
The present disclosure is about a patent application for a bismuth antimony (BiSb) based spin torque oscillator (STO) sensor. The sensor consists of a spin-orbit torque (SOT) device and a magnetic tunnel junction (MTJ) structure. The use of a BiSb layer in the SOT device allows for a larger spin Hall angle (SHA), resulting in improved efficiency and reliability of the STO sensor.
- The patent application is for a BiSb based STO sensor.
- The sensor includes a SOT device and a MTJ structure.
- The BiSb layer in the SOT device enables a larger SHA.
- The larger SHA improves the efficiency and reliability of the STO sensor.
Potential Applications
This technology has potential applications in various fields, including:
- Magnetic field sensing
- Data storage devices
- Magnetic random-access memory (MRAM)
- Spintronic devices
Problems Solved
The technology addresses the following problems:
- Limited efficiency and reliability of STO sensors
- Insufficient spin Hall angle in conventional STO sensors
- Inadequate performance of magnetic field sensing and data storage devices
Benefits
The technology offers the following benefits:
- Improved efficiency and reliability of STO sensors
- Larger spin Hall angle for enhanced performance
- Better magnetic field sensing and data storage capabilities
Original Abstract Submitted
The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
