18244350. INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yukyung Park of Hwaseong-si (KR)

Minseung Yoon of Yongin-si (KR)

Yunseok Choi of Hwaseong-si (KR)

INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18244350 titled 'INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Simplified Explanation

The patent application describes an interposer, which is a component used in electronic devices to connect different layers or components together. Here is a simplified explanation of the abstract:

  • The interposer has a base layer with two opposite surfaces.
  • On one surface, there is an interconnect structure consisting of a metal interconnect pattern surrounded by an insulating layer.
  • On the other surface, there is a lower protection layer.
  • The lower protection layer has multiple lower conductive pads.
  • The base layer and the lower protection layer have through electrodes that connect the metal interconnect pattern to the lower conductive pads.
  • The insulating layer or the lower protection layer has compressive stress.
  • The thickness of the lower protection layer is between 13% and 30% of the thickness of the insulating layer.

Potential applications of this technology:

  • This interposer design can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can improve the reliability and performance of the interconnects between different components in these devices.

Problems solved by this technology:

  • The compressive stress in the insulating layer or lower protection layer helps to prevent delamination or cracking of the layers, improving the durability of the interposer.
  • The through electrodes provide a reliable electrical connection between the metal interconnect pattern and the lower conductive pads.

Benefits of this technology:

  • Enhanced reliability and durability of interconnects in electronic devices.
  • Improved performance and signal integrity due to the reliable electrical connections.
  • Potential cost savings in manufacturing processes due to the optimized design of the interposer.


Original Abstract Submitted

An interposer includes a base layer including a first surface and a second surface that are opposite to each other. An interconnect structure is disposed on the first surface. The interconnect structure includes a metal interconnect pattern and an insulating layer surrounding the metal interconnect pattern. A first lower protection layer is disposed on the second surface. A plurality of lower conductive pads is disposed on the first lower protection layer. A plurality of through electrodes penetrates the base layer and the first lower protection layer. The plurality of through electrodes electrically connects the metal interconnect pattern of the interconnect structure to the lower conductive pads. At least one of the insulating layer and the first lower protection layer has compressive stress. A thickness of the first lower protection layer is in a range of about 13% to about 30% of a thickness of the insulating layer.

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