18243731. SEMICONDUCTOR DEVICE INCLUDING DIFFERENT CONDUCTIVE LINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE INCLUDING DIFFERENT CONDUCTIVE LINES
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SEMICONDUCTOR DEVICE INCLUDING DIFFERENT CONDUCTIVE LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243731 titled 'SEMICONDUCTOR DEVICE INCLUDING DIFFERENT CONDUCTIVE LINES
Simplified Explanation
The semiconductor device described in the patent application includes multiple layers and components that work together to improve performance and functionality. Here are the key points of the innovation:
- Lower structure with interlayer insulating layer
- Conductive shielding line penetrating through the interlayer insulating layer
- Capping insulating layer on top of the interlayer insulating layer and shielding line
- Bit line penetrating through the capping insulating layer and interlayer insulating layer
- Bit line positioned at a higher level than the shielding line
- Lower surface of the bit line at an equal or lower level than the lower surface of the shielding line
Potential Applications: - Memory devices - Microprocessors - Integrated circuits
Problems Solved: - Signal interference - Cross-talk between components - Electrical leakage
Benefits: - Improved performance - Enhanced signal integrity - Higher efficiency in data processing
Original Abstract Submitted
A semiconductor device includes a lower structure, an interlayer insulating layer on the lower structure, a conductive shielding line on the lower structure and penetrating through the interlayer insulating layer, a capping insulating layer on the interlayer insulating layer and the conductive shielding line, and a bit line on the lower structure and penetrating through the capping insulating layer and the interlayer insulating layer. An upper surface of the bit line is at a higher level than an upper surface of the conductive shielding line. A lower surface of the bit line is at a level equal to or lower than a level of a lower surface of the conductive shielding line.
